Peter Naguib is an accomplished researcher specializing in RF semiconductor technologies, thin-film SAW (TFSAW) filters, and wafer-level device development. His research focuses on optimizing charge trapping layers and wafer stack architectures for 5G and 6G RF devices, targeting reduced insertion loss and enhanced material performance. Utilizing a combination of cleanroom fabrication, nanoindentation-based mechanical analysis, and advanced computational modeling with FEM, COMSOL, MATLAB, and Python, he bridges experimental and theoretical approaches to advance semiconductor device technology. Peter’s work encompasses the characterization of dielectric thin films, development of high-resistivity silicon substrates, and innovation in wafer-level process integration. His interdisciplinary expertise extends to machine learning applications for predictive data analysis, embedded systems, and smart metering technologies, highlighting a commitment to practical engineering solutions. He has contributed to peer-reviewed publications and international conference presentations, including studies on silicon nitride charge trapping layers and mechanical characterization of thin films. Through his research, Peter is advancing the design, fabrication, and analysis of next-generation RF devices, emphasizing high-performance, energy-efficient, and scalable semiconductor solutions for communication and sensing applications.
Featured Publications
Naguib, P. G., Ye, J., Knapp, M., Mbopda, G., Walenta, C. A., & Feiertag, G. (2025). Sound velocity determination for silicon oxide thin films: A mechanical approach using nanoindentation. Next Research, 2(3), 100578.