Haoxiang Wang | Semiconductor Processing | Research Excellence Award

Dr. Haoxiang Wang | Semiconductor Processing | Research Excellence Award

Lecturer at Changshu Institute of Technology | China

Dr. Haoxiang Wang is a distinguished researcher in ultra-precision machining and semiconductor materials processing, focusing on 4H-SiC and AlN. His work combines molecular dynamics simulations and experimental characterization to understand nanoscale deformation, subsurface damage, and ductile–brittle transitions, enabling optimized grinding and chemical mechanical polishing techniques. He has published 17 high-impact papers in leading journals, contributing predictive models and innovative process insights that advance semiconductor manufacturing. His research has garnered 318 citations with an h-index of 8 on Scopus, demonstrating both the quality and influence of his work. His contributions are highly relevant to advancing precision manufacturing technologies.

Citation Metrics (Scopus)

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Citations
318

Documents
17

h-index
8

Featured Publications


Warping model of high-power IGBT modules subjected to reflow soldering process
– S Gao, R Wang, H Wang, R Kang; International Journal of Mechanical Sciences 251, 108350, 2023; Citations: 21

Atomic understanding of the plastic deformation mechanism of 4H-SiC under different grain depth-of-cut during nano-grinding
– H Wang, S Gao, X Guo, Y Ding, R Kang; Journal of Electronic Materials 52 (7), 4865-4877, 2023; Citations: 24

Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal
– S Gao, H Wang, H Huang, R Kang; International Journal of Mechanical Sciences 247, 108147, 2023; Citations: 132

Mechanical load-induced atomic-scale deformation evolution and mechanism of SiC polytypes using molecular dynamics simulation
– H Wang, S Gao, R Kang, X Guo, H Li; Nanomaterials 12 (14), 2489, 2022; Citations: 38

Environment-friendly chemical mechanical polishing using NaHCO3-activated H2O2 slurry for highly efficient finishing of 4H-SiC (0001) surface
– Y Shen, H Wang, X Guo, S Gao; Journal of Manufacturing Processes 109, 213-221, 2024; Citations: 34